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| CYStech Electronics Corp. High Voltage PNP Epitaxial Planar Transistor Spec. No. : C309N3-H Issued Date : 2003.06.30 Revised Date : Page No. : 1/4 BTPA94N3 Description * High breakdown voltage. (BVCEO=-400V) * Low saturation voltage, typically VCE(sat) = -0.07V at Ic/IB =-10mA/-1mA. * Wide SOA (safe operation area). * Complementary to BTNA44N3. Symbol BTPA94N3 Outline SOT-23 BBase CCollector EEmitter Absolute Maximum Ratings (Ta=25C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Thermal Resistance, Junction to Ambient Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC Pd RJA Tj Tstg Limits -400 -400 -6 -300 225 556 150 -55~+150 Unit V V V mA mW C/W C C BTPA94N3 CYStek Product Specification CYStech Electronics Corp. Characteristics (Ta=25C) Symbol BVCBO BVCEO BVEBO ICBO IEBO ICES VCE(sat) 1 *VCE(sat) 2 *VCE(sat) 3 *VBE(sat) hFE 1 *hFE 2 *hFE 3 *hFE 4 Cob Min. -400 -400 -6 50 56 50 40 Typ. Max. -10 -10 -10 -0.2 -0.3 -0.6 -0.9 270 6 Unit V V V A A A V V V V pF Spec. No. : C309N3-H Issued Date : 2003.06.30 Revised Date : Page No. : 2/4 Test Conditions IC=-50A IC=-1mA IE=-50A VCB=-400V VEB=-6V VCB=-400V IC=-1mA, IB=-0.1mA IC=-10mA, IB=-1mA IC=-50mA, IB=-5mA IC=-20mA, IB=-2mA VCE=-10V, IC=-1mA VCE=-10V, IC=-10mA VCE=-10V, IC=-50mA VCE=-10V, IC=-100mA VCB=-10V, IE=0A,f=1MHz *Pulse Test: Pulse Width 380s, Duty Cycle2% Classification Of hFE Rank Range K 56~120 P 82~180 Q 120~270 BTPA94N3 CYStek Product Specification CYStech Electronics Corp. Characteristic Curves Current Gain vs Collector Current 1000 VCE=10V Current Gain---HFE Current Gain---HFE 1000 Spec. No. : C309N3-H Issued Date : 2003.06.30 Revised Date : Page No. : 3/4 Current Gain vs Collector Current VCE=6V 100 100 10 0.1 1 10 Collector Current---IC(mA) 100 10 0.1 1 10 Collector Current---IC(mA) 100 Saturation Voltage vs Collector Current 1 VCE(sat)@IC=10IB Saturation Voltage---(V) Saturation Voltage---(V) 1 Saturation Voltage vs Collector Current VBE(sat@IC=10IB 0.1 0.01 1 10 Collector Current---IC(mA) 100 0.1 0.1 1 10 100 Collector Current---IC(mA) On Voltage vs Collector Current 0.8 Power Derating Curve 250 Power Dissipation---PD(mW) 100 0.7 0.6 On Voltage---(V) 0.5 0.4 0.3 0.2 0.1 0 0.1 1 10 Collector Current---IC(mA) VBE(on)@VCE=3V 200 150 100 50 0 0 50 100 150 Ambient Temperature --- Ta( ) 200 BTPA94N3 CYStek Product Specification CYStech Electronics Corp. SOT-23 Dimension Spec. No. : C309N3-H Issued Date : 2003.06.30 Revised Date : Page No. : 4/4 A L 3 B 1 2 S Marking: TE 4Z V G 3-Lead SOT-23 Plastic Surface Mounted Package CYStek Package Code: N3 Style: Pin 1.Base 2.Emitter 3.Collector C D K H J *: Typical DIM A B C D G H Inches Min. Max. 0.1102 0.1204 0.0472 0.0630 0.0335 0.0512 0.0118 0.0197 0.0669 0.0910 0.0005 0.0040 Millimeters Min. Max. 2.80 3.04 1.20 1.60 0.89 1.30 0.30 0.50 1.70 2.30 0.013 0.10 DIM J K L S V Inches Min. Max. 0.0034 0.0070 0.0128 0.0266 0.0335 0.0453 0.0830 0.1083 0.0098 0.0256 Millimeters Min. Max. 0.085 0.177 0.32 0.67 0.85 1.15 2.10 2.75 0.25 0.65 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: * Lead: 42 Alloy ; solder plating * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: * All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. * CYStek reserves the right to make changes to its products without notice. * CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTPA94N3 CYStek Product Specification |
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